Stanford Seminar - Flash Reliability in Production: The Expected and the Unexpected

Explore the intricacies of flash memory reliability in production environments through this Stanford Seminar. Delve into the expected and unexpected aspects of flash reliability, examining field data, drive replacements, and errors experienced during a drive's lifecycle. Investigate the factors impacting flash reliability, including wear-out effects, flash types (SLC versus MLC), lithography, and workload influences. Analyze the relationship between raw bit error rates (RBER) and overall reliability, as well as uncorrectable errors. Gain insights into predictive indicators for uncorrectable errors and enhance your understanding of flash memory performance in real-world applications.

Introduction.
Main research interests.
Publicly available information.
Field data.
The data.
Drive replacements.
Errors experienced during a drive's lifecycle.
What factors impact flash reliability?.
Effect of wear-out (program erase cycles).
Effect of type of flash (SLC versus MLC).
Effect of lithography.
Effect of workload?.
How does workload affect error rates?.
RBER and overall reliability.
RBER and uncorrectable errors.
What is predictive of uncorrectable errors?.