Semiconductor Device Modeling

Course Learning Outcomes: At the end of this course, you should be able to

1. Explain the equations, approximations and techniques available for deriving a model with specified properties, for a general device characteristic with known qualitative theory

2. Apply suitable approximations and techniques to derive the model referred to above starting from drift-diffusion transport equations (assuming these equations hold)

3. Offer clues to a qualitative understanding of the physics of a new device and conversion of this understanding into equations

4. Simulate characteristics of a simple device using MATLAB, SPICE and ATLAS /SYNOPSYS

5. Explain how the equations get lengthy and parameters increase in number while developing a compact model

6. List mathematical functions representing various non-linear shapes

Mod-14 Lec-01 DC Model of a Bulk MOSFET: Series R, non-uniform doping and small size effects.
Mod-12 Lec-06 DC Model of a Large MOSFET: Surface Potential and VT Based Solutions of IDS.
Mod-12 Lec-05 DC Model of a Large MOSFET: Surface Potential and VT Based Solutions of IDS.
Mod-12 Lec-02 DC Model of a Large MOSFET: Surface Potential and VT Based Solutions of IDS.
Mod-12 Lec-04 DC Model of a Large MOSFET: Surface Potential and VT Based Solutions of IDS.
Mod-13 Lec-02 DC Model of a Large MOSFET: Testing, Improvement and Parameter Extraction.
Mod-13 Lec-01 DC Model of a Large MOSFET: Testing, Improvement and Parameter Extraction.
Mod-12 Lec-01 DC Model of a Large MOSFET: Surface Potential and VT Based Solutions of IDS.
Mod-11 Lec-01 DC Model of a Large MOSFET: Eqns, Boundary Condns, Approximations.
Mod-12 Lec-03 DC Model of a Large MOSFET: Surface Potential and VT Based Solutions of IDS.
Mod-14 Lec-02 DC Model of a Bulk MOSFET: Series R, non-uniform doping and small size effects.