Engineering 2D Electron and Hole Gases at Si/SiGe Interfaces - Insights from DFT

Explore the engineering of two-dimensional electron and hole gases at Si/SiGe interfaces through insights from Density Functional Theory (DFT) in this 22-minute conference talk by Garima Ahuja from the International Centre for Theoretical Sciences. Delve into the fascinating world of engineered 2D quantum materials, focusing on the electronic properties of silicon and silicon-germanium heterostructures. Gain valuable knowledge about the application of DFT in understanding and manipulating these interfaces to create novel electronic states. Learn how reduced dimensionality and the interplay between different materials can lead to emergent phenomena and new electronic band structures. This talk is part of a broader program on engineered 2D quantum materials, covering topics such as magnetism, topological superconductivity, and correlated phenomena in various heterostructures and twisted materials.

Engineering 2D Electron and Hole Gases at Si/SiGe Interfaces: Insights from DFT by Garima Ahuja