Advancing the State of the Art in Semiconductor Technology Through Predictive Atomistic Calculations - Lecture 35

Explore the frontiers of semiconductor technology through predictive atomistic calculations in this Distinguished Lecture by Prof. Emmanouil Kioupakis from the University of Michigan. Delve into the fundamental limitations and discover new materials in semiconductor research. Examine quantum processes in semiconductor devices, focusing on phonon-mediated processes and their impact on optical absorption. Investigate challenges in nitride LEDs, ultra-wide-band-gap semiconductors, and the limitations of alloy disorder in AlGaN mobility. Learn about defect calculation methods, the Baliga Figure of Merit, and recent advancements in epitaxial thin films. Gain insights into co-doping acceptors with hydrogen and understand the timeless and timely problems in semiconductor technology for electrons and energy applications.

35TH DISTINGUISHED LECTURE
Semiconductors: a timeless problem for electron
Semiconductors: a timeless problem for energy
Semiconductors: a timely problem
Quantum processes in semiconductor devices
Workflow for phonon-mediated quantum process
Overview
Need for phonon-assisted optics
Quantum theory of optical absorption
Challenge: interpolation over Brillouin zone
Phonon-assisted optical absorption in silicon
Other semiconductors: BAs
Doped semiconductors: silicon
Absorption in transparent conducting oxides
Introduction to Auger-Meitner recombination
On the naming of Auger-Meitner recombinati
Auger-Meitner recombination in silicon
Problems with nitride LEDs
Ultra-wide-band-gap semiconductors
Example: deep vs. shallow defects
Challenges with diamond, cBN: dopants, mob
Challenges with AlGaN: alloy-disorder scatteri
Alloy disorder limits the mobility of AlGaN
Band structure of rutile GeO₂
Defect calculation method
Baliga Figure of Merit
First epitaxial thin films
Summary and Acknowledgements
Co-doping acceptors with Hydrogen