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Electronics : Diode (Part 1) - A Solid State Approach

Offered By: Udemy

Tags

Electrical Engineering Courses P-N Junction Courses Solid-State Physics Courses

Course Description

Overview

Diode as a Solid State Device-know what is happening inside the diode-Very useful for 2nd year Electronics Engg students

What you'll learn:
  • Understand the fundamentals of P-N Junction Semiconductor diode by adopting a Solid State approach.
  • Analysis of Diode under Forward Bias,its Energy Band Diagram,Carrier Concentration variation w.r.t distance,Electric Field picture
  • Mathematical expressions for Electric potential, Depletion Layer under Equilibrium.
  • Discussion on Quasi-Fermi level and Energy Band Diagram plot.
  • Carrier concentration as a Function of distance under applied forward bias.
  • Current Density as a function of distance under applied forward bias.
  • A common misunderstanding-Cut in voltage VS Built in voltage.
  • V-I Characteristics of Diode under different bias conditions.
  • Understand Diode function Generator & Diode Transfer-function Generator.
  • Diode properties under reverse biased condition.
  • Discussion on Breakdown phenomena-Avalanche Breakdown & Zener Breakdown.

Learn the fundamentals of Diodes and take the first leap to the world of Electronics. This course is on Diode as a Solid State Device. In this course we will thoroughly learn what happens inside a Diode under various applied voltages. So lets have a highlight of the entire course quickly-


  • Understand the fundamentals of P-N Junction Semiconductor diode. In this lecture we will understand the Diode from Solid State approach, that is we will learn what actually happens inside the Diode under different circumstances.

  • Properties of P-N Junction Semiconductor diode (Concept of Energy Band Diagram, Depletion Width, Electric Field at the junction etc). Examples have also been included to further clarify the concepts.

  • Mathematical expressions for Electric potential, Depletion Layer under Equilibrium.

  • Discussion on Quasi-Fermi level and Energy Band Diagram plot.

  • Carrier concentration as a Function of distance under applied forward bias. Its mathematical expressions have also been derived.

  • Current Density as a function of distance under applied forward bias. Its mathematical expressions have also been derived.

  • A common misunderstanding- Cut in voltage VS Built in voltage.

  • V-I Characteristics of Diode under different bias conditions.

  • Understand Diode function Generator & Diode Transfer-function Generator.

  • Diode properties under reverse biased condition.

  • Discussion on Breakdown phenomena-Avalanche Breakdown & Zener Breakdown.




Taught by

Sumanta kumar Pal

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