Diode - pn Junction and Metal Semiconductor Contact

This course can also be taken for academic credit as ECEA 5631, part of CU Boulder’s Master of Science in Electrical Engineering degree. This course presents in-depth discussion and analysis of pn junction and metal-semiconductor contacts including equilibrium behavior, current and capacitance responses under bias, breakdown, non-rectifying behavior, and surface effect. You'll work through sophisticated analysis and application to electronic devices. At the end of this course learners will be able to: 1. Analyze pn junction at equilibrium and under bias, capacitance and current characteristics, and breakdown behavior 2. Analyze metal-semiconductor contact at equilibrium and under bias, capacitance and current characteristics, non-rectifying contact and surface effects

• PN Junction at Equilibrium
• In this module, we look at pn junction in equilibrium. Topics include: Device structure for pn junction, Energy band diagram at equilibrium for pn junction, Depletion approximation for step junction, Poisson's equation for step junction, Energy band diagram of pn step junction, Beyond depletion approximation, Poisson's equation, Energy band diagram for linearly graded junction, Energy band diagram for heterojunction, and Effect of band alignment for heterojunction.
• PN Junction Under Bias
• In this module on pn junction under bias, we will cover the following topics: Energy band diagram of pn junction under bias, Capacitance-voltage characteristics, Impact ionization, Avalanche breakdown, Avalanche breakdown voltages, Tunneling current, Zener breakdown, Energy band diagram of pn junction under forward bias, Continuity equation, Boundary conditions, Ideal diode equation, Long- and short-base diodes, Recombination and generation in depletion region, Non-ideal current, Effect of band alignment, and Diffusion and thermionic emission currents.
• Metal-Semiconductor Contact
• In this module on metal semiconductor contacts, we will cover the following topics: Device structure, Equilibrium energy band diagram, Electrostatic analysis, Energy band diagram under bias, Capacitance-voltage characteristics, Image charge, Dependence of barrier height on electric field, Energy band diagram of Schottky contact under bias, Thermionic emission current, Ohmic contact by heavy doping in semiconductor, Ohmic contact by low metal work function, Surface states, Fermi level pinning.
• Optoelectronic Devices
• In this module on LEDs, we will cover the follow topics: Basic operating principles of LEDs, Survey of LEDs, Blue LED and solid state lighting, Basic principle of semiconductor laser, Condition for net stimulated emission, Types of semiconductor laser, Photodiode, Avalanche photodiode, Solar cell operating principle, and I-V characteristics and power output.